avionics applications rf & microwave transistors .400 x .400 2lfl (m138) hermetically sealed . designed for high power pulse iff, dme, and tacan applications . 200 w (typ.) iff 1030 - 1090 mhz . 150 w (min.) dme 1025 - 1150 mhz . 140 w (typ.) tacan 960 - 1215 mhz . 7.8 db min. gain . refractory gold metallization . ballasting and low thermal resistance for reliability and ruggedness . 30:1 load vswr capability at specified operating conditions . input and output matched, common base configuration description the SD1538-08 is a gold metallized, silicon npn power transistor. the SD1538-08 is designed for applications requiring high peak power and low duty cycles such as iff, dme and tacan. the SD1538-08 is packaged in a metal/ceramic pack- age with internal input/output matching, resulting in improved broadband performance and low ther- mal resistance. pin connection branding 1538-8 order code SD1538-08 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cbo collector-base voltage 65 v v ces collector-emitter voltage 65 v v ebo emitter-base voltage 3.5 v i c device current 11 a p diss power dissipation 583 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 0.30 c/w SD1538-08 1. collector 3. emitter 2. base 4. base thermal data september 6, 1994 1/5
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 1025 - 1150 mhz p in = 25 w v ce = 50 v 150 w p g f = 1025 - 1150 mhz p in = 25 w v ce = 50 v 7.8 db note: pulse width = 10 m sec, duty cyle = 1% static symbol test conditions value unit min. typ. max. bv cbo i c = 10ma i e = 0ma 65 v bv ces i c = 25ma v be = 0v 65 v bv ebo i e = 5ma i c = 0ma 3.5 v i ces v ce = 50v i e = 0ma 10 ma h fe v ce = 5v i c = 300ma 5 dynamic typical performance power output vs power input power output vs frequency SD1538-08 2/5
efficiency vs power input typical performance (cont'd) efficiency vs frequency impedance data typical input impedance typical collector load impedance SD1538-08 3/5
test circuit c1, c2 : .6 - 4.5pf gigatrim c3 : .100 x .100 120pf chip capacitor c4 : .100 x .100 470pf chip capacitor c5 : 100 m f electrolytic l1 : #20 awg l2 : 3 turns, #20 awg wound on #32 drill bit board material: telfon er = 2.5, thickness = .031" SD1538-08 4/5
package mechanical data ref.: dwg. no.12-0138 rev. d information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectron- ics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replac es all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in lif e support devices or systems wit hout express written approval of sgs-thomson microelectronics. ?1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. SD1538-08
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